1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 2. pinning information PMV30XN 20 v, 3.2 a n-channel trench mosfet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c --20v v gs gate-source voltage -12 - 12 v i d drain current v gs =4.5v; t amb =25c [1] --3.2a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d = 3.2 a; t j = 25 c - 28 35 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g mbb076 1 of 3 sales@zpsemi.com www.zpsemi.com
3. ordering information 4. marking [1] % = placeholder for manufacturing site code 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 3. ordering information type number package name description version PMV30XN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV30XN nz% table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j =25c - 20 v v gs gate-source voltage -12 12 v i d drain current v gs =4.5v; t amb =25c [1] -3.2a v gs =4.5v; t amb =100c [1] -2.1a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 12.8 a p tot total power dissipation t amb =25c [2] - 380 mw [1] - 520 mw t sp = 25 c - 1800 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] -0.6a PMV30XN 20 v, 3.2 a n-channel trench mosfet 2 of 3 sales@zpsemi.com www.zpsemi.com
6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 20--v v gsth gate-source threshold voltage i d =250a; v ds =v gs ; t j = 25 c 0.5 1 1.5 v i dss drain leakage current v ds =20v; v gs =0v; t j =25c --1a v ds =20v; v gs =0v; t j =150c --10a i gss gate leakage current v gs =12v; v ds =0v; t j = 25 c - - 100 na v gs =-12v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =4.5v; i d = 3.2 a; t j = 25 c - 28 35 m ? v gs =4.5v; i d = 3.2 a; t j =150c - 4451m ? v gs =2.5v; i d = 2.6 a; t j = 25 c - 39 60 m ? g fs forward transconductance v ds =10v; i d =3a; t j =25c - 15 - s dynamic characteristics q g(tot) total gate charge v ds =15v; i d =3a; v gs =4.5v; t j =25c -4.97.4nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge - 2.9 - nc c iss input capacitance v ds =15v; f=1mhz; v gs =0v; t j =25c - 420 - pf c oss output capacitance - 125 - pf c rss reverse transfer capacitance -73-pf t d(on) turn-on delay time v ds =15v; v gs =4.5v; r g(ext) =6 ? ; t j =25c; i d =3a -11-ns t r rise time - 28 - ns t d(off) turn-off delay time - 93 - ns t f fall time - 51 - ns source-drain diode v sd source-drain voltage i s = 0.6 a; v gs =0v; t j = 25 c - 0.67 1.2 v PMV30XN 20 v, 3.2 a n-channel trench mosfet 3 of 3 sales@zpsemi.com www.zpsemi.com
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